* High burnout resistance
* Low noise figure
* Hermetically sealed package MAXIMUM RATINGS IF VR PDISS TJ TSTG 20 mA 1.0 V 2.0 (ERGS) @ TC = 25 °C -55 °C to.

Operating From 8.0 to 12.4 GHz. PACKAGE STYLE DO- 23 FEATURES:
* High burnout resistance
* Low noise figure

The ASI 1N415E is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz. PACKAGE STYLE DO- 23 FEATURES:
* High burnout resistance
* Low noise figure
* Hermetically sealed package MAXIMUM RATINGS IF VR PDISS TJ.

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